IGBT MODULE MG500Q1US1

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IGBT MODULE MG500Q1US1

Toshiba

Specification sheet: MG500Q1US1

IGBT MODULE MG500Q1US1

Features:

  • Collector-Emitter Voltage – 1200V
  • Gate Emitter Voltage – +-20V
  • junction temperature – 150 degree Celsius

Applications:

  • High Power Switching Application.
  • Motor  Control Application
  • Low Saturation Voltage
  • High Speed
  • The Electrodes are isolated from Case.
  • 6 IGBTs are built into 1 Package.
  • Enhancement Mode
SKU: ECDIGB0005 Categories: ,
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