Home IGBT MODULE MG500Q1US1

IGBT MODULE MG500Q1US1

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IGBT MODULE MG500Q1US1

Features:
  • Collector-Emitter Voltage – 1200V
  • Gate Emitter Voltage – +-20V
  • junction temperature – 150 degree Celsius
Applications:
  • High Power Switching Application.
  • Motor  Control Application
  • Low Saturation Voltage
  • High Speed
  • The Electrodes are isolated from Case.
  • 6 IGBTs are built into 1 Package.
  • Enhancement Mode

Part StatusActive
ProductIGBT MODULE
ManufacturerToshiba
Manufacturer Part NumberMG500Q1US1
Coil Current500A
Coil Voltage1200V
RoHS StatusRoHS compliant