Description
IGBT MODULE MG500Q1US1
Features:
- Collector-Emitter Voltage – 1200V
- Gate Emitter Voltage – +-20V
- junction temperature – 150 degree Celsius
Applications:
- High Power Switching Application.
- Motor Control Application
- Low Saturation Voltage
- High Speed
- The Electrodes are isolated from Case.
- 6 IGBTs are built into 1 Package.
- Enhancement Mode
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